tsm 18 0n 0 3 p q33 3 0 v n - channel power mosfet 1 / 5 version: a1 4 pdfn33 key parameter performance parameter value unit v ds 30 v r ds(on) (max) v gs = 10v 1 8 m v gs = 4 .5v 28 q g 4.1 nc ordering information part no. package packing tsm 18 0n 03pq33 rgg pdfn33 5k pcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds block diagram n - channel mosfet absolute maximum rating s ( t c = 25 c unless otherwise noted ) parameter symbo l limit unit drain - source voltage v ds 3 0 v gate - source voltage v gs 2 0 v continuous drain current t c = 25 c i d 25 a t c = 100 c 16 a pulsed drain current (note 1) i dm 100 a single pulse avalanche energy (note 2) e as 32 mj power dissipation @ t c = 25 c p d 21 w operating junction temperature t j +150 c storage temperature range t stg - 55 to +150 c thermal performance parameter symbol limit unit thermal resistance - junction to ambient r ? ja 62 c /w thermal resistance - junction to case r ? jc 6 c /w pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
tsm 18 0n 0 3 p q33 3 0 v n - channel power mosfet 2 / 5 version: a1 4 el ectrical specifications ( t c = 25 c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 3 0 -- -- v drain - source on - state resistance v gs = 10v, i d = 12 a r ds(on) -- 1 4 18 m ? v gs = 4.5v, i d = 8 a -- 2 0 28 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 1 .2 1. 6 2 .5 v zero gate voltage drain current v ds = 3 0v, v gs = 0v i dss -- -- 1 a v ds = 24 v, t j = 125 c -- -- 10 gate body leakage v gs = 2 0v, v ds = 0v i gss -- -- 1 0 0 n a forward transconductance (note 3 ) v ds = 1 0v, i d = 6 a g fs -- 6.5 -- s dynamic total gate charge (note 3 , 4 ) v ds = 15 v, i d = 6 a, v gs = 4.5 v q g -- 4 .1 -- nc gate - source charge (note 3 , 4 ) q gs -- 1 -- gate - drain charge (note 3 , 4 ) q gd -- 2 . 1 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 345 -- pf output capacitance c oss -- 55 -- reverse transfer capacitance c rss -- 32 -- switching turn - on delay time (note 3 , 4 ) v dd = 15 v, i d = 1 a, v gs = 10v, r g = 6 ? t d(on) -- 2.8 -- ns turn - on rise time (note 3 , 4 ) t r -- 7.2 -- turn - off delay time (note 3 , 4 ) t d(off) -- 15.8 -- turn - off fall time (note 3 , 4 ) t f -- 4.6 -- source - drain diode ratings and characteristic maximum continuous drain - source diode forw ard current integral reverse diode in the mosfet i s -- -- 25 a maximum pulse drain - source diode forward current i s m -- -- 100 a diode - source forward voltage v gs = 0v , i s = 1 a v sd -- -- 1 v note : 1. pulse width limited by safe operating area 2. l = 1mh, i as = 8a, v dd = 25v, r g = 25 ? , starting t j = 25 c 3. pulse test: pulse width "d 300 s , duty cycle "d 2% 4. switching time is essentially independent of operating temperature.
tsm 18 0n 0 3 p q33 3 0 v n - channel power mosfet 3 / 5 version: a1 4 electrical characteristics curve continuous drain current vs. t c gate charge on - resistance vs. jun ction temperature threshold voltage vs. junction temperature maximum safe operating area normalized thermal transient impedance curve i d , continuous drain current (a) t c , case temperature ( c ) v gs , gate to source voltage (v) qg, gate charge (nc) normalized on resistance (m w ) t j , ju nction temperature ( c ) normalized gate threshold voltage (v) t j , junction temperature ( c ) i d, continuous drain current (a) v d , drain to source voltage (v) normalized thermal response (r ? jc ) square wave pulse duration (s)
tsm 18 0n 0 3 p q33 3 0 v n - channel power mosfet 4 / 5 version: a1 4 pdfn33 mechanical drawing unit: millimeters marking diagram y = year code m = month code f or halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 18 0n 0 3 p q33 3 0 v n - channel power mosfet 5 / 5 version: a1 4 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any in tellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc produ cts including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving , or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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